november 1999 preliminary ? 1999 fairchild semiconductor corporation FDG318P rev b (w) FDG318P p-channel 2.5v specified powertrench ? mosfet general description this p-channel 2.5v specified mosfet is produced in a rugged gate version of fairchild semiconductor?s advanced powertrench process. it has been optimized for power management applications for a wide range of gate drive voltages (2.5v ? 12v). applications ? load switch ? power management ? dc/dc converter features ? ?1.5 a, ?20 v r ds(on) = 0.200 ? @ v gs = ?4.5 v r ds(on) = 0.350 ? @ v gs = ?2.5 v ? low gate charge (2.8nc typical) ? high performance trench technology for extremely low r ds(on) ? compact industry standard sc70-6 surface mount package sc70-6 3 5 6 4 1 2 3 absolute maximum ratings t a =25 o c unless otherwise noted symbol parameter ratings units v dss drain-source voltage ?20 v v gss gate-source voltage 12 v i d drain current ? continuous (note 1a) ?1.5 a ? pulsed ?6 power dissipation for single operation (note 1a) 0.75 p d (note 1b) 0.48 w t j , t stg operating and storage junction temperature range -55 to +150 c thermal characteristics r ja thermal resistance, junction-to-ambient note 1b) 260 c/w package marking and ordering information device marking device reel size tape width quantity .18 FDG318P 7?? 8mm 3000 units FDG318P
FDG318P rev b (w) electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain?source breakdown voltage v gs = 0 v, i d = ?250 a ?20 v ? bv dss ? t j breakdown voltage temperature coefficient i d = ?250 a, referenced to 25 c ?16 mv/ c i dss zero gate voltage drain current v ds = ?16 v, v gs = 0 v ?1 a i gssf gate?body forward leakage v gs = 12 v, v ds = 0 v 100 na i gssr gate?body reverse leakage v gs = ?12 v, v ds = 0 v ?100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = ?250 a ?0.6 ?1.1 ?1.5 v ? v gs(th) ? t j gate threshold voltage temperature coefficient i d = ?250 a, referenced to 25 c 3 mv/ c r ds(on) static drain?source on?resistance v gs = ?4.5 v, i d = ?1.5 a v gs = ?4.5 v, i d = ?1.5 a, t j = 125 c v gs = ?2.5 v, i d = ?1.0 a 0.162 0.220 0.280 0.200 0.300 0.350 ? i d(on) on?state drain current v gs = ?4.5 v, v ds = ?5 v ?3 a g fs forward transconductance v ds = ?5 v, i d = ?1.5 a 3.6 s dynamic characteristics c iss input capacitance 266 pf c oss output capacitance 115 pf c rss reverse transfer capacitance v ds = ?10 v, v gs = 0 v, f = 1.0 mhz 31 pf switching characteristics (note 2) t d(on) turn?on delay time 8 16 ns t r turn?on rise time 23 37 ns t d(off) turn?off delay time 14 25 ns t f turn?off fall time v dd = ?10 v, i d = ?1 a, v gs = ?4.5 v, r gen = 6 ? 412ns q g total gate charge 2.8 4.0 nc q gs gate?source charge 0.8 nc q gd gate?drain charge v ds = ?10 v, i d = ?1.5 a, v gs = ?4.5 v 0.8 nc drain?source diode characteristics and maximum ratings i s maximum continuous drain?source diode forward current ?0.62 a v sd drain?source diode forward voltage v gs = 0 v, i s = ?0.62 a (note 2) ?0.77 ?1.2 v notes: 1. r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the so lder mounting surface of the drain pins. r jc is guaranteed by design while r ca is determined by the user's board design. a.) 170c/w when mounted on a 1in 2 pad of 2 oz. copper. b.) 260c/w when mounted on a minimum pad. 2. pulse test: pulse width < 300 s, duty cycle < 2.0% FDG318P
FDG318P rev b (w) typical characteristics 0 2 4 6 8 10 012345 -v ds , drain-source voltage (v) -i d , drain-source current (a) v gs = -4.5v -3.0v -4.0v -3.5v -2.5v 0.8 1 1.2 1.4 1.6 1.8 2 2.2 0246810 - i d , drain current (a) r ds(on) , normalized drain-source on-resistance v gs = -2.5v -4.0v -4.5v -3.5v -3.0v figure 1. on-region characteristics. figure 2. on-resistance variation with drain current and gate voltage. 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 -50 -25 0 25 50 75 100 125 150 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistance i d = -1.5a v gs = - 4.5v 0 0.1 0.2 0.3 0.4 0.5 0.6 12345 -v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = -0.75a t a = 125 o c t a = 25 o c figure 3. on-resistance variation with temperature. figure 4. on-resistance variation with gate-to-source voltage. 0 2 4 6 8 10 0.5 1.5 2.5 3.5 4.5 -v gs , gate to source voltage (v) -i d , drain current (a) t a = -55 o c 25 o c 125 o c v ds = -5v 0.001 0.01 0.1 1 10 0 0.4 0.8 1.2 1.6 -v sd , body diode forward voltage (v) -i s , reverse drain current (a) t a = 125 o c 25 o c -55 o c v gs = 0v figure 5. transfer characteristics. figure 6. body diode forward voltage variation with source current and temperature. FDG318P
FDG318P rev b (w) typical characteristics 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5 q g , gate charge (nc) -v gs , gate-source voltage (v) i d = -1.5a v ds = -5v -10v -15v 0 100 200 300 400 0 5 10 15 20 -v ds , drain to source voltage (v) capacitance (pf) c iss c rss c oss f = 1mhz v gs = 0 v figure 7. gate charge characteristics. figure 8. capacitance characteristics. 0.01 0.1 1 10 0.1 1 10 100 -v ds , drain-source voltage (v) -i d , drain current (a) dc 10s 1s 100ms 10ms 1ms r ds(on) limit v gs = -10v single pulse r ja = 260 o c/w t a = 25 o c 0 5 10 15 20 25 30 0.0001 0.001 0.01 0.1 1 10 100 t 1 , time (sec) p(pk), peak transient power (w) single pulse r ja = 260c/w t a = 25c figure 9. maximum safe operating area. figure 10. single pulse maximum power dissipation. 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 t 1 , time (sec) r(t), normalized effective transien t thermal resistance r ja (t) = r(t) + r ja r ja = 260 c/w t j - t a = p * r ja (t) duty cycle, d = t 1 / t 2 p ( pk ) t 1 t 2 single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 figure 11. transient thermal response curve. thermal characterization performed using the conditions described in note 1c. transient thermal response will change depending on the circuit board design. FDG318P
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